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| www..com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GJ09N20 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications at power dissipation levels to approximately 50 watts. Description Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings 200 30 8.6 5.5 36 69 0.55 40 8.6 -55 ~ +150 Unit V V A A A W W/ : mJ A : Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.8 110 Unit : /W : /W GJ09N20 Page: 1/4 ISSUED DATE :2005/06/27 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 200 2.0 - Typ. 0.24 3.7 23 4 13 12 25 36 16 500 90 40 Max. 4.0 100 10 100 380 37 800 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=1mA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=5A VGS= 30V VDS=200V, VGS=0 VDS=160V, VGS=0 VGS=10V, ID=5A ID=8.6A VDS=160V VGS=10V VDD=100V ID=8.6A VGS=10V RG=10 RD=11.6 VGS=0V VDS=25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Diode Parameter Forward On Voltage3 Reverse Recovery Time Reverse Recovery Charge Symbol VSD Trr Qrr Min. Typ. 225 2260 Max. 1.3 Unit V ns nC Test Conditions IS=8.6A, VGS=0V IS=8.6A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=1mH, RG=25 , IAS=8.6A. 3. Pulse width 300us, duty cycle 2%. GJ09N20 Page: 2/4 ISSUED DATE :2005/06/27 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GJ09N20 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/06/27 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ09N20 Page: 4/4 |
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